DocumentCode :
1235041
Title :
Parasitic capacitance effects of planar resistors
Author :
Demurie, Stefaan N. ; De Mey, Gilbert
Author_Institution :
Lab. of Electron., Ghent State Univ., Belgium
Volume :
12
Issue :
3
fYear :
1989
fDate :
9/1/1989 12:00:00 AM
Firstpage :
348
Lastpage :
351
Abstract :
The intrinsic capacitance of a planar resistor in a hybrid circuit is discussed. Basic theory is outlined to model the self-capacitance effect of resistive layers. A perturbation method is derived where the zeroth order accounts for the pure resistive effects and the first-order perturbation deals with the capacitive effects. It is shown that even in the absence of contact electrode capacity, any resistive layer creates a capacitive field in the substrate and the surrounding materials. A model is made to describe these intrinsic capacitance effects, and some numerical results are shown
Keywords :
capacitance; hybrid integrated circuits; resistors; hybrid circuit; intrinsic capacitance; numerical results; parasitic capacitance; perturbation method; planar resistors; self-capacitance effect; zeroth order; Conductors; Current density; Electrodes; Hybrid integrated circuits; Integrated circuit interconnections; Parasitic capacitance; Resistors; Software packages; Substrates; Voltage;
fLanguage :
English
Journal_Title :
Components, Hybrids, and Manufacturing Technology, IEEE Transactions on
Publisher :
ieee
ISSN :
0148-6411
Type :
jour
DOI :
10.1109/33.35481
Filename :
35481
Link To Document :
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