• DocumentCode
    1237349
  • Title

    Chalcogenide-Nanowire-Based Phase Change Memory

  • Author

    Yu, Bin ; Sun, Xuhui ; Ju, Sanghyun ; Janes, David B. ; Meyyappan, M.

  • Author_Institution
    NASA Ames Res. Center, Moffett Field, CA
  • Volume
    7
  • Issue
    4
  • fYear
    2008
  • fDate
    7/1/2008 12:00:00 AM
  • Firstpage
    496
  • Lastpage
    502
  • Abstract
    We report fabrication of phase change random access memory (PRAM) using nanowires (NWs) of GeTe and In2Se3. NWs were grown by a vapor-liquid-solid technique and ranged from 40 to 80 nm in diameter and several micrometers long. A dynamic switching ratio (on/off ratio) of 2200 and 2 times 105 was realized for GeTe and indium selenide devices, respectively. The programming power for the RESET operation is only tens of microwatts compared to the milliwatt power levels required by the conventional thin-film-based PRAM.
  • Keywords
    chalcogenide glasses; germanium compounds; indium compounds; nanowires; random-access storage; selenium compounds; semiconductor storage; tellurium compounds; GeTe; In2Se3; chalcogenide-nanowire; conventional thin-film-based PRAM; indium selenide devices; phase change random access memory; size 40 nm to 80 nm; vapor-liquid-solid technique; Chalcogenide; Phase change random access memory; chalcogenide; nanoelectronics; nanowires; nanowires (NWs); phase change random access memory (PRAM);
  • fLanguage
    English
  • Journal_Title
    Nanotechnology, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    1536-125X
  • Type

    jour

  • DOI
    10.1109/TNANO.2008.926374
  • Filename
    4531962
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1237349