Title :
Low-threshold-current-density vertical-cavity surface-emitting AlGaAs/GaAs diode lasers
Author :
Botez, D. ; Zinkiewicz, L.M. ; Roth, T.J. ; Mawst, L.J. ; Peterson, G.
Author_Institution :
TRW Space & Technol. Group, Redondo Beach, CA, USA
Abstract :
The optimization of electrically pumped vertical-cavity surface emitters (VCSEs) with conductive semiconductor-stack rear reflectors and mirror-reflectivity products of 0.93 for minimum threshold current density, J/sub th/, is presented. Devices of two different active layer thicknesses are fabricated: 3 mu m, as for conventional devices, and 0.6 mu m, which, according to theoretical calculations, provides J/sub th/ for lasers with a mirror reflectivity product in the 0.90-0.95 range. For structures of 0.16- mu m thick active layers, J/sub th/ values as low as 10 kA/cm/sup 2/ are obtained, in good agreement with theory. Analysis shows that for active layer thicknesses >
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; laser cavity resonators; semiconductor junction lasers; AlGaAs-GaAs diode lasers; active layer thicknesses; conductive semiconductor-stack rear reflectors; double-heterostructure devices; electrically pumped vertical-cavity surface emitters; minimum threshold current density; mirror-reflectivity products; multiquantum-well structure devices; thin active medium structures; Dielectric substrates; Diode lasers; Etching; Gallium arsenide; Optical arrays; Reflectivity; Semiconductor laser arrays; Surface emitting lasers; Threshold current; Vertical cavity surface emitting lasers;
Journal_Title :
Photonics Technology Letters, IEEE
