Title :
Low-switching-voltage InGaAsP/InP waveguide interferometric modulator for integrated optics
Author :
Taakeuchi, H. ; Kasaya, K. ; Oe, K.
Author_Institution :
Opto-Electron. Lab., NTT, Kanagawa, Japan
Abstract :
An InGaAsP/InP electrooptic Mach-Zehnder modulator consisting of two 3-dB Y-branch couplers and phase modulation arms is fabricated by the metal-organic vapor-phase epitaxy growth method. A schematic illustration and cross section of the interferometric modulator as well as the current-voltage characteristics of the arms are shown. The modulator is formed by a waveguide having almost the same cross-sectional configuration as a double-heterostructure laser diode. The switching voltage of 4.5 V applied to one arm of the modulator results in an excitation of about 7 dB.<>
Keywords :
III-V semiconductors; electro-optical devices; gallium arsenide; gallium compounds; indium compounds; integrated optics; light interferometers; optical modulation; optical waveguide components; semiconductor growth; vapour phase epitaxial growth; 4.5 V; InGaAsP/InP electrooptic Mach-Zehnder modulator; Y-branch couplers; cross-sectional configuration; current-voltage characteristics; excitation; integrated optics; low switching voltage InGaAsP-InP waveguide interferometric modulator; metal-organic vapor-phase epitaxy growth method; phase modulation arms; Arm; Chirp modulation; Frequency; Indium phosphide; Integrated optics; Optical interferometry; Optical modulation; Optical waveguides; Phase modulation; Voltage;
Journal_Title :
Photonics Technology Letters, IEEE
