DocumentCode
1238679
Title
Highly reliable operation of strain-compensated 0.98 μm InGaAs/lnGaP/GaAs lasers with InGaAsP strained barriers for EDFAs
Author
Toyonaka, Takahiro ; Sagawa, Masakazu ; Hiramoto, Kiyohisa ; Shinoda, Kazuma ; Uomi, K. ; Ohishi, A.
Author_Institution
Fiberoptics Div., Hitachi Ltd., Tokyo
Volume
31
Issue
3
fYear
1995
fDate
2/2/1995 12:00:00 AM
Firstpage
198
Lastpage
199
Abstract
Highly reliable operation of 0.98 μm strain-compensated InGaAs/ InGaAsP lasers is demonstrated for the first time with an estimated lifetime of 170 kh at 25°C. Moreover, we reveal that the degradation rates at 90°C and 80 mW output power are four times smaller than those of identical lasers with GaAs barriers
Keywords
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; laser transitions; optical pumping; quantum well lasers; semiconductor device reliability; 0.98 micron; 170000 hr; 25 to 90 C; 80 mW; EDFA pumping; Er doped fibre amplifier pumping; InGaAs-InGaP-GaAs; InGaAsP; InGaAsP strained barriers; QW laser pump source; degradation rates; highly reliable operation; strain-compensated laser;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19950154
Filename
362565
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