Title :
Strained InGaAs quantum disk laser with nanoscale active region fabricated with self-organisation on GaAs (311)B substrate
Author :
Temmyo, J. ; Kuramochi, E. ; Nishiya, T. ; Notzel, R. ; Tamamura, T.
Author_Institution :
NTT Opto-Electron. Labs., Kanagawa
fDate :
2/2/1995 12:00:00 AM
Abstract :
Continuous-wave (CW) operation of a strained InGaAs quantum disk laser with nanoscale active-structures self-organised on GaAs (311)B substrate is demonstrated at room temperature. The threshold current is ~20 mA, which is considerably lower than that of double quantum well lasers on GaAs (100) substrate grown side-by-side
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; nanotechnology; optical fabrication; quantum well lasers; ridge waveguides; semiconductor growth; semiconductor quantum dots; vapour phase epitaxial growth; waveguide lasers; 20 mA; CW operation; GaAs; InGaAs; continuous-wave operation; nanoscale active region; room temperature; self-organisation; strained InGaAs quantum disk laser; threshold current;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19950140
