Ka-Band Substrate IntegratedWaveguide Gunn Oscillator

Based on the substrate integrated waveguide (SIW) technology, a new type of Ka-band Gunn Diode Oscillator was developed. Main emphasis was placed on SIW resonant cavity structure. Restrictions on the performance of the oscillators imposed by packaged networks and the self-characteristic of the Gunn diode devices have been analyzed. This oscillator performance is characterized by a medium level output power of 15.2 dBm, a low phase noise less than -91.23 dBc/Hz at 100 kHz and frequency excursion 53 MHz over temperature range from 15degC to 70degC. It has some advantages such as planar integration, low cost, small size, good temperature-frequency stability, low phase noise.