Title :
Preparation of perovskite type manganite on Al2O3 substrate as an excellent buffer layer for YBa2Cu3O7-δ growth
Author :
Nishikawa, Hiroaki ; Hontsu, Shigeki ; Nakamori, Masaya ; Tabata, Hitoshi ; Kawai, Tomoji
Author_Institution :
B.O.S.T., Kinki Univ., Wakayama, Japan
fDate :
6/1/2003 12:00:00 AM
Abstract :
The perovskite type ferromagnetic manganite Pr0.8Ca0.2MnO3 (PCMO) buffer layers for superconducting microwave devices were examined in order to allow Al2O3 single crystal to be used as a substrate for YBa2Cu3O7-δ (YBCO) growth and to provide functionality for microwave devices. The use of magnetic buffer layers with YBCO is effective to magnetically controllable superconducting microwave devices. The (0001) surface of the Al2O3 and [113]-oriented YBCO are used in this study due to the similarity of ion configurations at the interface. YBCO grown on the PCMO buffer shows a critical temperature of 87.5 K. The straight line of YBCO grown on the Al2O3 (0001) buffered by the PCMO shows relatively good transmission property with the insertion loss of less than 0.7 dB below 70 K measured at 2 GHz. These results indicate that PCMO is a suitable magnetic buffer layer for YBCO growth on Al2O3 (0001).
Keywords :
barium compounds; high-temperature superconductors; pulsed laser deposition; superconducting microwave devices; superconducting thin films; superconducting transition temperature; yttrium compounds; 0.7 dB; 2 GHz; 70 K; Al2O3; Al2O3 single crystal substrate; PCMO magnetic buffer layer; Pr0.8Ca0.2MnO3; YBCO thin film growth; YBa2Cu3O7; critical temperature; high temperature superconductor; insertion loss; perovskite ferromagnetic manganite; pulsed laser deposition; superconducting microwave device; Buffer layers; Insertion loss; Magnetic devices; Propagation losses; Superconducting devices; Superconducting epitaxial layers; Superconducting magnets; Superconducting microwave devices; Temperature; Yttrium barium copper oxide;
Journal_Title :
Applied Superconductivity, IEEE Transactions on
DOI :
10.1109/TASC.2003.811967