• DocumentCode
    1241175
  • Title

    Growth mechanism and surface morphologies of Sm1+xBa2-xCu3O6+y thin films

  • Author

    Yoshida, Yutaka ; Sudoh, Kimihiko ; Ichino, Yusuke ; Hirabayashi, Izumi ; Takai, Yoshiaki

  • Author_Institution
    Dept. of Energy Eng. & Sci., Nagoya Univ., Japan
  • Volume
    13
  • Issue
    2
  • fYear
    2003
  • fDate
    6/1/2003 12:00:00 AM
  • Firstpage
    2785
  • Lastpage
    2788
  • Abstract
    In order to obtain high quality multilayer Sm1+xBa2-xCu3O6+y (SmBCO) coated conductors, it is indispensable to understand the surface growth mechanism of the SmBCO system. Using AFM, the step-and-terrace features due to 3D island growth are observed that are polygonal-like from the surface images. Steps and terrace width are approximately 1.2 nm in height and 30 nm in width, respectively. Spiral steps accompanied by screw dislocations were observed on the surface films of Ca doped SmBCO films. The spiral shapes of Ca doped SmBCO films are polygonal-like with width of ∼ 80 nm. Using Ca-doping, the surface morphology of the SmBCO films changes from 3D island growth mode to spiral growth, and contributes to the flat surface of the SmBCO-multilayers.
  • Keywords
    atomic force microscopy; barium compounds; critical current density (superconductivity); high-temperature superconductors; samarium compounds; screw dislocations; superconducting thin films; surface morphology; surface topography; 1.2 nm; 30 nm; 3D island growth; 80 nm; AFM; Sm1+xBa2-xCu3O6+y; Sm1+xBa2-xCu3O6+y thin films; growth mechanism; high quality multilayer; high temperature superconductor; screw dislocations; step-and-terrace features; steps width; surface morphologies; surface morphology; terrace width; Conducting materials; Conductive films; High temperature superconductors; Samarium; Spirals; Superconducting films; Superconducting materials; Surface morphology; Transistors; Yttrium barium copper oxide;
  • fLanguage
    English
  • Journal_Title
    Applied Superconductivity, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    1051-8223
  • Type

    jour

  • DOI
    10.1109/TASC.2003.812008
  • Filename
    1212199