Title :
A novel /spl delta/-doped GaAs/lnGaAs real-space transfer transistor with high peak-to-valley ratio and high current driving capability
Author :
Chang-Luen Wu ; Wei-Chou Hsu ; Hir-Ming Shieh ; Ming-Shang Tsai
Author_Institution :
Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan
fDate :
3/1/1995 12:00:00 AM
Abstract :
A three-terminal /spl delta/-doped GaAs/In/sub 0.25/Ga/sub 0.75/As/GaAs real-space transfer transistor (RSTT) has been implemented by low-pressure metalorganic chemical vapor deposition (LP-MOCVD) for the first time. We carried out an ohmic recess resulting in shallow alloyed contacts, electrically isolated from ohmic electrodes. An undoped low-growth-rate buffer layer was inserted between the collector and barrier to suppress the dopant out-diffusion from the substrate to the barrier. The proposed device with a 5×100 μm2 emitter channel revealed an extremely sharp charge injection, a broad valley range (>5 V), a high peak-to-valley current ratio up to 430000, and a high current driving capability at room temperature. These characteristics are, to our knowledge, among the highest reported values to date.
Keywords :
III-V semiconductors; doping profiles; field effect transistors; gallium arsenide; indium compounds; ohmic contacts; semiconductor doping; vapour phase epitaxial growth; /spl delta/-doped GaAs/lnGaAs; GaAs-In/sub 0.25/Ga/sub 0.75/As-GaAs; LP-MOCVD; broad valley range; charge injection; chemical vapor deposition; delta doping; dopant out-diffusion suppression; high current driving capability; high peak-to-valley ratio; low-pressure MOCVD; metalorganic CVD; ohmic recess; real-space transfer transistor; shallow alloyed contacts; three-terminal device; undoped low-growth-rate buffer layer; Buffer layers; Chemical vapor deposition; Doping; Electrodes; Electron emission; Gallium arsenide; Ohmic contacts; Out of order; Substrates; Wet etching;
Journal_Title :
Electron Device Letters, IEEE