Title :
Self-Oscillation Free 0.35
m Si/SiGe BiCMOS X-Band Digital Frequency Divider
Author :
Ducati, F. ; Pifferi, M. ; Borgarino, M.
Author_Institution :
Dept. of Inf. Eng., Modena & Reggio Emilia Univ., Modena
fDate :
7/1/2008 12:00:00 AM
Abstract :
This letter reports a digital master-slave D-type register divide-by-512 frequency divider designed in a 0.35 Si/SiGe BiCMOS technology. The 600times1200 mum2 circuit operates up to 9.5 GHz dissipating 120 mW. Self-oscillations are avoided by the use of a radio frequency carrier detector that controls the bias of the last six registers.
Keywords :
BiCMOS analogue integrated circuits; Ge-Si alloys; frequency dividers; microwave integrated circuits; shift registers; silicon; BiCMOS technology; Si-SiGe; X-band digital frequency divider; digital master-slave D-type register; frequency 9.5 GHz; power 120 mW; radio frequency carrier detector; self-oscillation free frequency divider; size 0.35 mum; BiCMOS; X band; frequency divider; prescaler;
Journal_Title :
Microwave and Wireless Components Letters, IEEE
DOI :
10.1109/LMWC.2008.925114