A dielectric tunnel RC device model for magnetic tunnel junction in magnetic random access memory cell

Author

Li, Simon C. ; Lee, Jia-Mou ; Shu, Min-Fong ; Su, J.P. ; Wu, Te-Ho

Author_Institution

Taiwan SPIN Res. Center, Nat. Yunlin Univ. of Sci. & Technol., Touliu, Taiwan

Volume

41

Issue

2

fYear

2005

Firstpage

899

Lastpage

902

Abstract

The dielectric tunnel resistance-capacitance model of the thin insulating layer in a magnetic tunnel junction for device operation in magnetic random access memory circuit is proposed. The curve-fitting function derived from Simmons´ tunneling equations describing the variation of dielectric tunnel resistance and tunnel capacitance before the tunneling, is well characterized. In addition, a characterization technique developed from the mathematical analysis of dielectric tunnel resistance and capacitance with ramp voltage characteristics measured by conductive atomic force microscopy is established.

Keywords

atomic force microscopy; capacitance; curve fitting; dielectric devices; electric resistance; magnetic storage; magnetic tunnelling; random-access storage; Simmons tunneling equations; conductive atomic force microscopy; curve-fitting function; dielectric tunnel RC device model; dielectric tunnel resistance; dielectric tunnel resistance-capacitance model; magnetic random access memory cell; magnetic tunnel junction; ramp voltage; tunnel capacitance; Atomic force microscopy; Atomic measurements; Capacitance; Dielectric devices; Dielectrics and electrical insulation; Force measurement; Magnetic circuits; Magnetic devices; Magnetic tunneling; Random access memory; Conductive atomic force microscopy (CAFM); dielectric tunnel resistance–capacitance (; magnetic random access memory (MRAM) cell; magnetic tunnel junction (MTJ);

fLanguage

English

Journal_Title

Magnetics, IEEE Transactions on

Publisher

ieee

ISSN

0018-9464

Type

jour

DOI

10.1109/TMAG.2004.842083

Filename

1396251