Title :
Effect of 3d-metal sulfide doping on the superconducting properties of Bi-2212 superconductors
Author :
Lima, C.L.S. ; Silva, P.B. ; Montarroyos, E. ; Yadava, Y.P. ; Aguiar, J.Albino
Author_Institution :
Departamento de Fisica, Univ. Fed. de Pernambuco, Recife, Brazil
fDate :
6/1/2003 12:00:00 AM
Abstract :
In the present work, we have studied the effect of 3d metal sulfide doping on the superconducting properties of the Bi-2212 superconductors with the nominal composition Bi2.1Sr2.1Ca0.8[(CuO)1-x(MS)x┐<span>2/O6+δ, where M = Ni, Cu, Zn, Ti. The samples were synthesized by solid state reaction process. Structural and magnetic characterization was carried out using x-ray diffractometry and magnetic susceptibility measurements. All the samples exhibited stabilization of superconducting Bi-2212 phase and reduction of superconducting transition temperature Tc. ZnS and TiS2 substitution for CuO planes and modification of oxygen content due to S substitution on O places jointly produce strong localization of charge carriers and at the same time improve the hole concentration of the system. These combined phenomena are responsible for the deterioration of superconductivity of ZnS and TiS2 doped Bi-2212 superconductors.
Keywords :
X-ray diffraction; bismuth compounds; calcium compounds; high-temperature superconductors; hole density; magnetic susceptibility; strontium compounds; superconducting transition temperature; 3d-metal sulfide doping; Bi-2212 high-Tc superconductor; Bi2Sr2Ca[(CuO)(CuS)]2O6; Bi2Sr2Ca[(CuO)(NiS)]2O6; Bi2Sr2Ca[(CuO)(TiS2)]2O6; Bi2Sr2Ca[(CuO)(ZnS)]2O6; X-ray diffractometry; hole concentration; magnetic characteristics; magnetic susceptibility; solid-state reaction; structural characteristics; superconducting properties; superconducting transition temperature; Bismuth; Doping; Magnetic susceptibility; Solid state circuits; Strontium; Superconducting magnets; Superconducting transition temperature; Superconductivity; X-ray diffraction; Zinc compounds;
Journal_Title :
Applied Superconductivity, IEEE Transactions on
DOI :
10.1109/TASC.2003.812128