Low-voltage, low-power, low switching error, class-AB switched current memory cell

A class-AB switched current memory cell is proposed. The circuit decomposes the input signal into two components by a low-voltage class-AB current splitter and subsequently processes the individual signals by two low switching error class-A memory cells. As a consequence, the output current obtained by recombination of the separated signals can be higher than the bias current and features low error. Simulation results confirm that, for a 0.75 V supply, a 5 MS/s sampling frequency, and a 500 kHz sinusoidal input current having 400% modulation index, the proposed memory provides less than -45 dB THD output current with very low switching error.