A compact tunable CMOS transconductor with high linearity

Author

Kachare, Meghraj ; López-Martín, Antonio J. ; Ramirez-Angulo, Jaime ; Carvajal, Ramon G.

Author_Institution

Klipsch Sch. of Electr. & Comput. Eng., New Mexico State Univ., Las Cruces, NM, USA

Volume

52

Issue

2

fYear

2005

Firstpage

82

Lastpage

84

Abstract

A novel CMOS linear transconductor is presented. The use of simple and accurate voltage buffers to drive two MOS transistors operating in the triode region leads to a highly linear voltage-to-current conversion. Transconductance gain can be continuously and precisely adjusted using dc level shifters. Measurement results of a balanced transconductor fabricated in a 0.5-μm CMOS technology show a total harmonic distortion of -54 dB at 100 kHz for an 80-μA peak-to-peak output, using a supply voltage of 2 V. It requires 0.07-mm² of silicon (Si) area and features 0.96 mW of static power consumption.

Keywords

CMOS analogue integrated circuits; buffer circuits; operational amplifiers; 0.5 micron; 0.96 mW; 100 kHz; 2 V; 80 muA; CMOS technology; MOS transistors; analog CMOS circuits; balanced transconductor; compact tunable CMOS transconductor; dc level shifters; harmonic distortion; linear operational transconductance amplifiers; linear transconductor; transconductance gain; triode region; voltage buffers; voltage-to-current conversion; Area measurement; CMOS technology; Distortion measurement; Linearity; MOSFETs; Power measurement; Total harmonic distortion; Transconductance; Transconductors; Voltage;

fLanguage

English

Journal_Title

Circuits and Systems II: Express Briefs, IEEE Transactions on

Publisher

ieee

ISSN

1549-7747

Type

jour

DOI

10.1109/TCSII.2004.842065

Filename

1396406