1.3 μm monolithic integrated optoelectronic receiver using an InGaAs MSM photodiode and AlGaAs/GaAs HEMTs grown on GaAs

Author

Hurm, V. ; Benz, W. ; Berroth, M. ; Fink, T. ; Fritzsche, D. ; Haupt, M. ; Hofmann, P. ; Jakobus, T. ; Kohler, Klaus ; Ludwig, M. ; Mause, K. ; Raynor, B. ; Rosenzweig, J.

Author_Institution

Fraunhofer Inst. for Appl. Solid State Phys., Freiburg, Germany

Volume

31

Issue

1

fYear

1995

fDate

1/5/1995 12:00:00 AM

Firstpage

67

Lastpage

68

Abstract

The first 1.3 μm monolithic integrated optoelectronic receiver using an InGaAs MSM photodiode and AlGaAs/GaAs HEMTs grown on a GaAs substrate has been fabricated. At differential output of the implemented multistage amplifier the transimpedance is 26.8 kΩ (into 50 Ω). The bandwidth of 430 MHz implies suitability for transmission rates up to 622 Mbit/s

Keywords

HEMT integrated circuits; III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; integrated optoelectronics; metal-semiconductor-metal structures; optical fibre communication; optical fibres; optical receivers; photodiodes; 1.3 micrometre; 26.8 kohm; 430 MHz; 622 Mbit/s; AlGaAs-GaAs; AlGaAs/GaAs HEMTs; InGaAs; InGaAs MSM photodiode; bandwidth; differential output; integrated optoelectronic receiver; multistage amplifier; transimpedance; transmission rates;

fLanguage

English

Journal_Title

Electronics Letters

Publisher

iet

ISSN

0013-5194

Type

jour

DOI

10.1049/el:19950004

Filename

364284