DocumentCode :
1243120
Title :
Reliable 2.3- 
m Wavelength Highly Strained InAs–InP MQW-DFB Lasers With p-/n-InP Buried Heterostructure
Author :
Takeshita, Tatsuya ; Sato, Tomonari ; Mitsuhara, Manabu ; Kondo, Yasuhiro ; Oohashi, Hiromi
Author_Institution :
NTT Photonics Labs., Nippon Telegraph & Telephone Corp., Atsugi
Volume :
21
Issue :
13
fYear :
2009
fDate :
7/1/2009 12:00:00 AM
Firstpage :
896
Lastpage :
898
Abstract :
We have realized reliable 2.3-mum wavelength InAs-InP multiquantum-well distributed-feedback (DFB) lasers for trace gas monitoring applications. The estimated median lifetime exceeds 1x105 hours during aging at an ambient temperature of 45degC and with a constant output power of 3 mW. Furthermore, the relative increase in operating current is proportional to the square root of time, and it is clarified that the main degradation mechanism in DFB lasers with highly strained InAs quantum wells is dominated by a diffusion process as found with conventional telecommunication lasers.
Keywords :
III-V semiconductors; distributed feedback lasers; indium compounds; laser reliability; measurement by laser beam; quantum well lasers; InAs-InP; MQW-DFB laser; ambient temperature; buried heterostructure; diffusion process; laser reliability; multiquantum-well distributed-feedback; power 3 mW; temperature 45 degC; trace gas monitoring application; wavelength 2.3 mum; Aging; distributed-feedback (DFB) lasers; laser reliability; quantum-well lasers; strain;
fLanguage :
English
Journal_Title :
Photonics Technology Letters, IEEE
Publisher :
ieee
ISSN :
1041-1135
Type :
jour
DOI :
10.1109/LPT.2009.2020059
Filename :
4815517
Link To Document :
