DocumentCode
1243487
Title
Modulation response of monolithic integrated GaAs/AlGaAs optoelectronic switch for high-speed electrical-to-optical data conversion
Author
Lu, Y.C. ; Cheng, J. ; Zhou, P. ; Klem, J. ; Zolper, J.C.
Author_Institution
Center for High Technol. Mater., New Mexico Univ., Albuquerque, NM, USA
Volume
31
Issue
2
fYear
1995
fDate
1/19/1995 12:00:00 AM
Firstpage
122
Lastpage
124
Abstract
The authors describe the design and the high frequency modulation characteristics of a monolithic optoelectronic switch integrating a vertical-cavity surface-emitting laser with a GaAs heterojunction bipolar transistor. Large-signal electrical-to-optical modulation at a data rate of >500 Mbit/s, and small-signal modulation with a 4 GHz bandwidth have been demonstrated
Keywords
III-V semiconductors; aluminium compounds; gallium arsenide; heterojunction bipolar transistors; integrated optoelectronics; laser beam applications; optical modulation; optical switches; semiconductor lasers; 4 GHz; 500 Mbit/s; GaAs HBT; GaAs-AlGaAs; HF modulation characteristics; heterojunction bipolar transistor; high-speed electrical-to-optical data conversion; large-signal modulation; modulation response; monolithic integrated optoelectronic switch; small-signal modulation; surface-emitting laser; vertical-cavity SEL;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19950089
Filename
364382
Link To Document