DocumentCode
1244131
Title
Temperature-dependent effects in high-speed travelling-wave electroabsorption modulators
Author
Yu, Yen-Ting ; Lewen, R. ; Westergren, Urban ; Thylen, Lars ; Irmscher, S. ; Eriksson, U.
Author_Institution
R. Inst. of Technol., Zhejiang Univ., Hangzhou, China
Volume
41
Issue
4
fYear
2005
Firstpage
209
Lastpage
211
Abstract
The temperature-dependent effects in a segmented travelling-wave electroabsorption modulator are demonstrated and analysed. Optimum operation voltages with the highest modulation efficiency at different temperatures are identified. This can ensure the modulator working at 50 Gbit/s with RF extinction ratio >8.4 dB between 10-50/spl deg/C at /spl lambda/=1540 nm.
Keywords
III-V semiconductors; electro-optical modulation; electroabsorption; gallium arsenide; gallium compounds; high-speed optical techniques; indium compounds; optical waveguides; semiconductor quantum wells; 10 to 50 degC; 1540 nm; 50 Gbit/s; InGaAsP-InGaAsP; InGaAsP-InGaAsP quantum wells; RF extinction ratio; high speed travelling wave electroabsorption modulators; modulation efficiency; temperature dependent effects;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:20057840
Filename
1397415
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