Characteristics of HfO2 pMOSFET prepared by B2H6 plasma doping and KrF excimer laser annealing

The electrical characteristics of HfO₂ pMOSFETs prepared by B₂H₆ plasma doping and excimer laser annealing were investigated. Various metal gate electrodes were evaluated to protect the high-κ oxide during laser irradiation. Although the aluminum gate electrode showed superior reflectivity to the laser, the equivalent oxide thickness was increased due to the interaction between aluminum and HfO₂, which resulted in reduced capacitance. In contrast, the Al-TaN stacked gate showed good reflectivity up to laser energy of 500 mJ/cm² and improved capacitance was obtained compared with the Al gate. For the first time, the electrical characteristics of a HfO₂ pMOSFET with an Al-TaN gate fabricated by plasma doping and excimer laser annealing were demonstrated. It was also demonstrated that plasma doping and excimer laser annealing combined with a metal gate could be applied for high-κ oxide MOSFET fabrication.