Low-noise distributed amplifier with active load

Author

Ikalainen, Pertti K.

Author_Institution

Semicond. Group, Texas Instrum. Inc., Dallas, TX, USA

Volume

6

Issue

1

fYear

1996

fDate

1/1/1996 12:00:00 AM

Firstpage

7

Lastpage

9

Abstract

Conventional distributed amplifiers show a marked increase in noise figure at frequencies below 2···6 GHz, depending on the design, because of noise emanating from a resistor that terminates the input line. It is shown in this letter that a low-noise device can be configured to emulate a one-port resistor, but with lower apparent noise temperature than the physical ambient temperature. The use of such an “electronically cold” resistor in the design of a low-noise distributed amplifier is discussed together with simulated results. The new distributed amplifier shows improved noise performance

Keywords

UHF amplifiers; circuit noise; distributed amplifiers; microwave amplifiers; active load; amplifier design; apparent noise temperature; electronically cold resistor; low noise pHEMT; low-noise distributed amplifier; noise figure; noise performance; one-port resistor emulation; simulated results; Active noise reduction; Circuit noise; Distributed amplifiers; Frequency; Helium; Low-frequency noise; Noise figure; Resistors; Semiconductor device noise; Temperature;

fLanguage

English

Journal_Title

Microwave and Guided Wave Letters, IEEE

Publisher

ieee

ISSN

1051-8207

Type

jour

DOI

10.1109/75.482054

Filename

482054