Si/SiGe epitaxial-base transistors. I. Materials, physics, and circuits

Author

Harame, D.L. ; Comfort, J.H. ; Cressler, J.D. ; Crabbé, E.F. ; Sun, J.Y.-C. ; Meyerson, B.S. ; Tice, T.

Author_Institution

IBM Thomas J. Watson Res. Center, Yorktown Heights, NY, USA

Volume

42

Issue

3

fYear

1995

fDate

3/1/1995 12:00:00 AM

Firstpage

455

Lastpage

468

Abstract

A detailed review of SiGe epitaxial base technology is presented, which chronicles the progression of research from materials deposition through device and integration demonstrations, culminating in the first SiGe integrated circuit application. In part I of this paper, the requirements and processes for high-quality SiGe film preparation are discussed, with emphasis on fundamental principles. A detailed overview of SiGe HBT device design and implications for circuit applications is then presented

Keywords

Ge-Si alloys; bipolar integrated circuits; elemental semiconductors; heterojunction bipolar transistors; integrated circuit technology; semiconductor epitaxial layers; semiconductor growth; semiconductor materials; silicon; vapour phase epitaxial growth; CVD epitaxial growth; HBT device design; Si-SiGe; Si/SiGe; epitaxial-base transistors; film preparation; integrated circuit application; materials deposition; Circuits; Epitaxial growth; Fabrication; Germanium silicon alloys; Heterojunction bipolar transistors; Physics; Semiconductor films; Semiconductor materials; Silicon germanium; Sun;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.368039

Filename

368039