DocumentCode :
1246771
Title :
Redundancy modelling and array yield analysis for repairable embedded memories
Author :
Sehgal, A. ; Dubey, A. ; Marinissen, E.J. ; Wouters, C. ; Vranken, H. ; Chakrabarty, K.
Author_Institution :
Dept. of Electr. & Comput. Eng., Duke Univ., Durham, USA
Volume :
152
Issue :
1
fYear :
2005
Firstpage :
97
Lastpage :
106
Abstract :
Embedded memories currently occupy more than 50% of the chip area for typical SOC integrated circuits. Defects in memory arrays can therefore significantly degrade manufacturing yield. In such a setting, repairable embedded memories are desirable because they help improve the memory array yield of an IC. We have developed an array yield analysis tool that provides realistic yield estimates for both single repairable memories, as well as for ICs containing multiple, possibly different, repairable embedded memories. Our approach uses pseudo-random fault bit-maps, which are generated based on memory area, defect density, and fault distribution. In order to accommodate a wide range of industrial memory and redundancy organizations, we have developed a flexible memory model. It generalizes the traditional simple memory matrix model with partitioning into regions, grouping of columns and rows, and column-wise and row-wise coupling of the spares. Our tool is used to determine an optimal amount of spare columns and rows for a given memory, as well as to determine the effectiveness of various repair algorithms.
Keywords :
integrated circuit yield; memory architecture; redundancy; system-on-chip; SOC; array yield analysis; column-wise coupling; defect density; fault distribution; flexible memory model; industrial memory; integrated circuits; manufacturing yield; memory area; memory arrays; memory matrix model; pseudo-random fault bit-maps; realistic yield estimates; redundancy modelling; redundancy organizations; repair algorithms; repairable embedded memories; row-wise coupling;
fLanguage :
English
Journal_Title :
Computers and Digital Techniques, IEE Proceedings -
Publisher :
iet
ISSN :
1350-2387
Type :
jour
DOI :
10.1049/ip-cdt:20045018
Filename :
1404563
Link To Document :
بازگشت