Title :
Measurement of the thickness of dielectric thin films on silicon photodetectors using the angular response to incident linearly polarized light
Author :
Azzam, R.M.A. ; Howlader, M.M.K.
Author_Institution :
Dept. of Electr. Eng., New Orleans Univ., LA, USA
fDate :
12/1/1994 12:00:00 AM
Abstract :
A simple and accurate technique for measuring the thickness of dielectric thin films on solid state photodetectors is described. It is based on the angle-of-incidence-dependent response of the detector to incident p(TM)- or s(TE)-polarized monochromatic light. The method is applied to determine the thickness of SiO2 films on planar-diffused Si photodiodes to within ±1 nm
Keywords :
dielectric thin films; elemental semiconductors; p-i-n photodiodes; photodetectors; silicon; silicon compounds; thickness measurement; Si; Si photodetectors; Si-SiO2; SiO2; SiO2 films; angle-of-incidence-dependent response; angular response; dielectric thin films; incident linearly polarized light; planar-diffused Si photodiodes; polarized monochromatic light; solid state photodetectors; thickness measurement; Dielectric measurements; Dielectric thin films; Optical films; Optical polarization; Photodetectors; Photodiodes; Reflectivity; Semiconductor films; Silicon; Thickness measurement;
Journal_Title :
Instrumentation and Measurement, IEEE Transactions on
