On the Noise Optimum of FET Broadband Transimpedance Amplifiers

Author

Säckinger, Eduard

Author_Institution

Ikanos Commun., Inc., Red Bank, NJ, USA

Volume

59

Issue

12

fYear

2012

Firstpage

2881

Lastpage

2889

Abstract

The optimum sizing of the front-end FET in transimpedance amplifiers (TIA) is revisited. Analytical solutions based on a second-order shunt-feedback TIA model that includes the feedback-resistor noise are derived. It is shown that the optimum FET size can be smaller or larger than suggested by the well-known capacitive matching rule, depending on whether the noise optimization is carried out under a constant gain-bandwidth-product constraint or a constant load-capacitance constraint.

Keywords

circuit feedback; circuit optimisation; field effect transistors; operational amplifiers; wideband amplifiers; FET broadband transimpedance amplifiers; capacitive matching rule; constant gain-bandwidth-product constraint; constant load-capacitance constraint; feedback-resistor noise; front-end FET; noise optimization; second-order shunt-feedback TIA model; Bandwidth; Capacitance; FETs; Load modeling; Logic gates; Noise measurement; Resistors; Field effect transistor; low-noise amplifiers; noise bandwidth; optical communication systems; transimpedance amplifiers;

fLanguage

English

Journal_Title

Circuits and Systems I: Regular Papers, IEEE Transactions on

Publisher

ieee

ISSN

1549-8328

Type

jour

DOI

10.1109/TCSI.2012.2206452

Filename

6248185