DocumentCode
1249908
Title
Potential and modelling of 1 μm 1 GHz SOI CMOS OTAs
Author
Eggermont, J.P. ; Flandre, Denis ; Raskin, J.P. ; Colinge, J.P.
Author_Institution
Microelectron. Lab., Univ. Catholique de Louvain
Volume
33
Issue
9
fYear
1997
fDate
4/24/1997 12:00:00 AM
Firstpage
774
Lastpage
775
Abstract
High-frequency device models, design guidelines and frequency limitations are presented, as well as layout and technology improvements to boost the transconductance at high frequency and to reduce the substrate capacitances. Implementations of one-stage and folded-cascode op-amps have been realised to validate the design method
Keywords
CMOS analogue integrated circuits; UHF amplifiers; UHF integrated circuits; integrated circuit design; integrated circuit layout; integrated circuit modelling; linear network synthesis; operational amplifiers; silicon-on-insulator; wideband amplifiers; 1 GHz; 1 micron; SOI CMOS OTA; Si; design guidelines; design method; folded-cascode op-amps; frequency limitations; high-frequency device models; one-stage op-amps; substrate capacitances;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19970517
Filename
590227
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