Title :
Q-band GaAs MESFET oscillator with 30% efficiency
Author :
Tserng, H.Q. ; Kim, B.
Author_Institution :
Texas Instrum. Inc., Dallas, TX, USA
fDate :
1/21/1988 12:00:00 AM
Abstract :
Microstrip GaAs MESFET oscillators using 75×0.25 μm devices have achieved record efficiencies and power densities at Q-band. At 34 GHz, an efficiency of 30% was obtained with an output power of 33 mW. A similar output power was achieved at 40 GHz with an efficiency of 25%. The corresponding power densities are in excess of 0.4 W per millimetre of gate width
Keywords :
III-V semiconductors; Schottky gate field effect transistors; gallium arsenide; microwave oscillators; solid-state microwave circuits; 25 to 30 percent; 33 mW; 34 to 40 GHz; GaAs; III-V semiconductors; MESFET oscillator; Q-band; high efficiency operation; microstrip type; solid state microwave circuits;
Journal_Title :
Electronics Letters
