Title :
Sub-1-dB Minimum-Noise-Figure Performance of GaN-on-Si Transistors Up to 40 GHz
Author :
Medjdoub, F. ; Tagro, Y. ; Zegaoui, M. ; Grimbert, B. ; Danneville, F. ; Ducatteau, D. ; Rolland, N. ; Rolland, P.A.
Author_Institution :
Inst. d´´Electron. de Microelectron. et de Nanotechnol., Villeneuve d´´Ascq, France
Abstract :
We report on the millimeter-wave noise performance of AlN/GaN/AlGaN double heterostructure (DHFET) grown on a 100-mm Si substrate with low-noise properties up to 40 GHz. The ultrathin-barrier GaN DHFETs simultaneously exhibit high current density, high transconductance, and high frequency performance (above 100 GHz) while showing low dc-to-RF dispersion and low gate and drain leakage currents. Consequently, sub-1-dB minimum noise figure at 36 GHz with an associated gain of 7.5 dB has been achieved. To our knowledge, this is the best noise performance reported in the Ka-band for any GaN device.
Keywords :
III-V semiconductors; aluminium compounds; current density; gallium compounds; high electron mobility transistors; leakage currents; millimetre wave field effect transistors; semiconductor device noise; semiconductor growth; wide band gap semiconductors; AlN-GaN-AlGaN; GaN-on-Si transistor; Si; current density; double heterostructure; drain leakage current; frequency 36 GHz; gain 7.5 dB; high frequency performance; high transconductance; low DC-to-RF dispersion; low gate current; low-noise property; millimeter-wave noise performance; minimum-noise-figure performance; noise figure 1 dB; size 100 nm; ultrathin-barrier DHFET; Aluminum gallium nitride; Gallium nitride; Logic gates; Noise; Performance evaluation; Silicon; Substrates; AlN/GaN heterostructure; Si substrate; high transconductance; low noise;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2012.2205215
