DocumentCode :
1252320
Title :
Cryogenic high-frequency operation of tunnelling hot-electron transfer amplifiers
Author :
Laskar, J. ; Moise, T.S. ; Kao, Y.C.
Volume :
33
Issue :
8
fYear :
1997
fDate :
4/10/1997 12:00:00 AM
Firstpage :
711
Lastpage :
713
Abstract :
The authors report the DC and high-frequency characteristics of tunnelling hot-electron transfer amplifiers (THETA) up to 18 K and with a varying composition of indium in the base. Optimum performance has been observed for the devices with 57% of indium in the InxGa 1-xAs base. Small-signal model intrinsic elements are extracted from the S-parameter data
Keywords :
cryogenic electronics; hot electron transistors; microwave amplifiers; tunnel transistors; 18 K; DC characteristics; InxGa1-xAs base; InGaAs; S-parameters; THETA transistor; cryogenic operation; high-frequency characteristics; small-signal model; tunnelling hot-electron transfer amplifier;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19970472
Filename :
591119
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1252320
بازگشت