DocumentCode :
1252352
Title :
InP-HBTs with good high frequency performance at low collector currents using silicon nitride planarisation
Author :
Willén, B. ; Haga, D.
Author_Institution :
Dept. of Electron., R. Inst. of Technol., Kista, Sweden
Volume :
33
Issue :
8
fYear :
1997
fDate :
4/10/1997 12:00:00 AM
Firstpage :
719
Lastpage :
720
Abstract :
A fabrication process for small area HBTs with a self-aligned base contact has been developed, based on silicon nitride planarisation. The mean current gain for 130 realised devices ranged from 40 for the smallest devices, to 71 for the largest, with a standard deviation of <10%. The transit frequency was 94.7±2.6 GHz, and the maximum frequency of oscillation 95.1±4.4 GHz, at a collector current of only 0.3 mA. The extremely good high frequency performance at low currents and high uniformity improves the competitiveness using InP-based HBTs for fabrication of complex integrated circuits
Keywords :
III-V semiconductors; heterojunction bipolar transistors; indium compounds; microwave bipolar transistors; surface treatment; 0.3 mA; 90.7 to 99.5 GHz; III-V semiconductors; InP; collector currents; fabrication process; high frequency performance; mean current gain; planarisation; self-aligned base contact; small area HBTs; standard deviation; transit frequency; uniformity;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19970470
Filename :
591124
Link To Document :
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