Title :
Resistive-fuse network for early vision using resonant tunnelling diodes and HEMTs on an InP substrate
Author :
Maezawa, K. ; Yamamoto, M.
Author_Institution :
NTT Syst. Electron. Labs., Atsugi, Japan
fDate :
4/10/1997 12:00:00 AM
Abstract :
A new resonant tunnelling resistive-fuse circuit featuring symmetric and flat-valley I-V curve is proposed for image processing. The network for early vision was fabricated using an InP-based resonant tunnelling diode/HEMT integration technology. The fabricated network demonstrates the effectiveness of the proposed resistive-fuse for image restoration
Keywords :
III-V semiconductors; electric fuses; high electron mobility transistors; image restoration; indium compounds; resonant tunnelling diodes; HEMT; InP; InP substrate; early vision; image processing; image restoration; resistive-fuse network; resonant tunnelling diode;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19970475
