• DocumentCode
    1253229
  • Title

    Collector-up InGaP/GaAs-double heterojunction bipolar transistors with high fmax

  • Author

    Henkel, Achim ; Delage, S.L. ; diForte-Poisson, M.-A. ; Chartier, E. ; Blanck, H. ; Hartnagel, H.L.

  • Author_Institution
    Lab. Central de Recherches, Thomson-CSF, Orsay
  • Volume
    33
  • Issue
    7
  • fYear
    1997
  • fDate
    3/27/1997 12:00:00 AM
  • Firstpage
    634
  • Lastpage
    636
  • Abstract
    The first fabrication and RF characterisation of an InGaP/GaAs double heterojunction bipolar transistor in collector-up configuration is reported. Boron implantation is used to avoid electron injection into the extrinsic base regions. The InGaP collector offers fmax=115 GHz and a high breakdown voltage (BVceo=27V)
  • Keywords
    III-V semiconductors; electric breakdown; gallium arsenide; heterojunction bipolar transistors; indium compounds; microwave bipolar transistors; semiconductor device reliability; 115 GHz; 27 V; III-V semiconductors; InGaP-GaAs; RF characterisation; breakdown voltage; collector-up configuration; double heterojunction bipolar transistors; extrinsic base regions; microwave bipolar transistors;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19970398
  • Filename
    591424
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1253229