Title :
High-performance InGaP/InxGa/sub 1-x/As HEMT with an inverted delta-doped V-shaped channel structure
Author :
Wen-Chan Liu ; Wen-Lung Chang ; Wen-Shiung Lour ; Hsi-Jen Pan ; Wei-Chou Wang ; Jing-Yuh Chen ; Kuo-Hui Yu ; Shun-Ching Feng
Author_Institution :
Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan
Abstract :
This letter reports a new and high-performance InGaP/In/sub x/Ga/sub 1-x/As high electron mobility transistor (HEMT) with an inverted delta-doped V-shaped channel. Due to the presence of V-shaped inverted delta-doped InGaP/In/sub x/Ga/sub 1-x/As structure, good carrier confinement and a flat and wide transconductance operation regime are expected. Experimentally, the fabricated device (1×100 μm2) shows a high gate-to-drain breakdown voltage of 30 V and a high output drain saturation current density of 826 mA/mm at V/sub GS/=2.5 V. The high transconductance expands over a very broad operation range with the maximum value of 201 mS/mm at 300 K. Meanwhile, the studied device exhibits a good microwave frequency linearity.
Keywords :
III-V semiconductors; current density; doping profiles; gallium arsenide; gallium compounds; high electron mobility transistors; indium compounds; microwave field effect transistors; semiconductor device breakdown; 2.5 V; 30 V; 300 K; HEMT; InGaP-InGaAs; carrier confinement; gate-to-drain breakdown voltage; inverted delta-doped V-shaped channel structure; microwave frequency linearity; output drain saturation current density; transconductance operation regime; Carrier confinement; Current density; Electron mobility; Gallium arsenide; HEMTs; Indium compounds; Indium gallium arsenide; MODFETs; Microwave frequencies; Transconductance;
Journal_Title :
Electron Device Letters, IEEE
