• DocumentCode
    1255124
  • Title

    Distributed feedback laser employing buried GaAs/InGaP index-coupled grating

  • Author

    Stevens, B.J. ; Groom, K.M. ; Roberts, Jeffrey S. ; Fry, P.W. ; Childs, D.T.D. ; Hogg, R.A.

  • Author_Institution
    Dept. of Electron. & Electr. Eng., Univ. of Sheffield, Sheffield, UK
  • Volume
    46
  • Issue
    15
  • fYear
    2010
  • Firstpage
    1076
  • Lastpage
    1077
  • Abstract
    The realisation of a GaAs-based distributed feedback laser based upon regrowth of standard AlGaAs upper cladding upon patterned InGaP is presented. Regrowth upon exposed AlGaAs surfaces during its fabrication is avoided. Gratings technology is applied to an In0.17Ga0.83As double quantum well laser emitting at 1 μm and demonstrates ~30 dB sidemode suppression with as-cleaved facets.
  • Keywords
    III-V semiconductors; aluminium compounds; diffraction gratings; distributed feedback lasers; gallium arsenide; indium compounds; quantum well lasers; refractive index; semiconductor growth; AlGaAs; GaAs-InGaP; distributed feedback laser; double quantum well laser; index-coupled grating;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el.2010.1605
  • Filename
    5521382
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1255124