Title :
Measurement of intermodulation distortion in a unitraveling-carrier refracting-facet photodiode and a p-i-n refracting-facet photodiode
Author :
Ohno, T. ; Fukano, H. ; Muramoto, Y. ; Ishibashi, T. ; Yoshimatsu, T. ; Doi, Y.
Author_Institution :
NTT Photoncs Labs., Kanagawa, Japan
fDate :
3/1/2002 12:00:00 AM
Abstract :
In this letter, we present an experimental characterization of third-order intermodulation distortion (IM3) at 5.8 GHz in a unitraveling-carrier refracting-facet photodiode (UTC-RFPD) and a p-i-n refracting-facet photodiode (pin-RFPD). The IM3 in the pin-RFPD is considerably reduced compared to the waveguide-type p-i-n photodiode. The third-order intercept point (IP3) of the UTC-RFPD does not decrease as the photocurrent increases, indicating that space-charge-induced nonlinearity is well suppressed in this photodiode. The two-tone IP3 of the UTC-RFPD estimated from the measurement reaches a very high level of 40.5 dBm.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; intermodulation distortion; optical receivers; p-i-n photodiodes; photodiodes; space charge; 5.8 GHz; IM3; InGaAs; InGaAs photodiodes; dedicated short-range communications; optical receiver; p-i-n refracting-facet photodiode; space-charge-induced nonlinearity suppression; third-order intercept point; third-order intermodulation distortion; two-tone IP3; unitraveling-carrier refracting-facet photodiode; waveguide-type p-i-n photodiode; Absorption; Bandwidth; Distortion measurement; Intelligent transportation systems; Intermodulation distortion; Light sources; Optical fiber communication; Optical modulation; Optical refraction; PIN photodiodes;
Journal_Title :
Photonics Technology Letters, IEEE
