DocumentCode :
1255392
Title :
Measured capacitance coefficients of multiconductor microstrip lines with small dimensions
Author :
Lin, Mou-Shiung
Author_Institution :
AT&T Bell Lab., Murray Hill, NJ, USA
Volume :
13
Issue :
4
fYear :
1990
fDate :
12/1/1990 12:00:00 AM
Firstpage :
1050
Lastpage :
1054
Abstract :
Measured capacitance coefficients of parallel microstrip lines with widths between 10-20 μm, spaces between 5-60 μm, and dielectric thickness between 10-15 μm on silicon substrates are reported. The experimental data are compared with results computed from a two-dimensional finite-element simulation program called WIRECAP. The comparison shows good agreement, with an accuracy of ±5% for the total capacitance and ≠20% for the coupling capacitance. WIRECAP is also shown to be in good agreement with other available simulation programs, such as the University of Arizona capacitance calculator (UAC) program. The measured near-end crosstalks are reported and it is shown that they can be accurately predicted by using the measured coupling capacitance
Keywords :
capacitance measurement; crosstalk; digital simulation; elemental semiconductors; finite element analysis; integrated circuit technology; metallisation; packaging; silicon; strip lines; substrates; 10 to 20 micron; 5 to 60 micron; Si; VLSI; WIRECAP; capacitance coefficients; coupling capacitance; dielectric thickness; metallisation lines; multiconductor microstrip lines; near-end crosstalks; packaging; parallel microstrip lines; two-dimensional finite-element simulation program; Capacitance measurement; Conductors; Dielectric substrates; Frequency; Microstrip; Packaging; Semiconductor device measurement; Transmission lines; Very large scale integration; Wiring;
fLanguage :
English
Journal_Title :
Components, Hybrids, and Manufacturing Technology, IEEE Transactions on
Publisher :
ieee
ISSN :
0148-6411
Type :
jour
DOI :
10.1109/33.62547
Filename :
62547
Link To Document :
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