DocumentCode :
1255542
Title :
Comparison of Analytical and Numerical Models for the Optimization of c-Si Solar Cells’ Front Metallization
Author :
Greulich, Johannes ; Fellmeth, Tobias ; Glatthaar, Markus ; Biro, Daniel ; Rein, Stefan
Volume :
2
Issue :
4
fYear :
2012
Firstpage :
588
Lastpage :
591
Abstract :
Progress in metallization techniques and emitter formation technologies needs fast and reliable tools for the optimization of the metallization pattern of crystalline silicon solar cells. We present and compare three models and discuss their validity and accuracy for different emitter sheet, finger and contact resistances, and finger widths. All models yield a similar optimal number of metallization fingers for a 156 mm × 156 mm large solar cell and broad plateaus concerning the dependence of the conversion efficiency on the finger spacing, but they differ concerning the absolute value of the fill factor and the dependence of the open-circuit voltage on the number of fingers.
Keywords :
contact resistance; elemental semiconductors; metallisation; semiconductor device models; silicon; solar cells; analytical models; c-Si solar cell optimization; contact resistances; crystalline silicon solar cells; emitter formation technologies; emitter sheet; fill factor; finger spacing; finger widths; front metallization; metallization fingers; metallization pattern; numerical models; open-circuit voltage; optimal number; Analytical models; Crystalline materials; Metallization; Numerical models; Photovoltaic cells; Design optimization; metallization; modeling; solar cell;
fLanguage :
English
Journal_Title :
Photovoltaics, IEEE Journal of
Publisher :
ieee
ISSN :
2156-3381
Type :
jour
DOI :
10.1109/JPHOTOV.2012.2206567
Filename :
6255752
Link To Document :
بازگشت