Title :
Extraction of emitter resistance of HBTs from S-parameter measurements
Author :
Yeong-Seuk Kim ; Shin-Jae Kang ; Nam-Soo Kim ; Sung-Ho Park ; Tae-Woo Lee ; Moon-Pyung Park
Author_Institution :
Sch. of Electr. & Electron. Eng., Chung-Buk Nat. Univ., Cheongju
fDate :
5/8/1997 12:00:00 AM
Abstract :
The authors propose a new method to extract the emitter resistance of HBTs. In the conventional emitter flyback method, the extracted emitter resistance of HBTs is a function of base current. Therefore, the selection of the base current is a large concern. The proposed method measures the S-parameters of HBTs operating in the active mode, which are transformed to h-parameters. The emitter resistance is then extracted from the h-parameters of the HBTs. The advantage of this method is that the emitter resistance is determined exactly for a given active bias
Keywords :
electric resistance; equivalent circuits; heterojunction bipolar transistors; semiconductor device models; semiconductor device testing; HBTs; S-parameter measurements; active bias; active mode; emitter resistance extraction; h-parameters;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19970595
