DocumentCode :
1255699
Title :
Design and Simulation of a MGy Radiation Tolerant Signal Conditioning Circuit for Resistive Sensors in 0.7 \\mu m CMOS
Author :
Leroux, P. ; Sterckx, J. ; Verbeeck, J. ; Van Uffelen, M. ; Damiani, C.
Author_Institution :
K. H. Kempen University College, Geel, Belgium
Volume :
59
Issue :
4
fYear :
2012
Firstpage :
1309
Lastpage :
1316
Abstract :
This paper presents the design and simulation results of a radiation tolerant configurable discrete time CMOS signal conditioning circuit for use with resistive sensors like strain gauge pressure sensors. The circuit is intended to be used for remote handling in harsh environments in the International Thermonuclear Experimental fusion Reactor (ITER) (experimental validation still needs to be performed). The design features a 5 V differential preamplifier using a Correlated Double Sampling (CDS) architecture at a sample rate of 20 kHz and a 24 V discrete time post amplifier. The gain is digitally controllable between 27 and 400 in the preamplifier and between 1 and 8 in the post amplifier. The nominal input referred noise voltage is only 8.5 \\mu {\\rm V}_{\\rm \\rms} while consuming only 1 mW. The circuit has a simulated radiation tolerance of more than 1 MGy.
Keywords :
CMOS integrated circuits; Capacitors; Gain; Sensors; Threshold voltage; Transconductance; Transistors; Instrumentation amplifier; international experimental thermonuclear fusion reactor (ITER); radiation hardening; signal conditioning;
fLanguage :
English
Journal_Title :
Nuclear Science, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9499
Type :
jour
DOI :
10.1109/TNS.2012.2205269
Filename :
6255779
Link To Document :
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