• DocumentCode
    1256191
  • Title

    Void free bonding of large silicon dice using gold-tin alloys

  • Author

    Matijasevic, G.S. ; Wang, Chen Y. ; Lee, Chin C.

  • Author_Institution
    Dept. of Electr. & Comput. Eng., California Univ., Irvine, CA, USA
  • Volume
    13
  • Issue
    4
  • fYear
    1990
  • fDate
    12/1/1990 12:00:00 AM
  • Firstpage
    1128
  • Lastpage
    1134
  • Abstract
    The successful bonding of large (6 mm×10 mm) silicon dice on alumina substrates with Au-Sn eutectic using a particular bonding technique is described. The bonding quality was examined by a scanning acoustic microscope having a resolution of 25 μm and it was found that nearly perfect bondings have been achieved. Use of Au-Sn alloy rather than Au-Si resulted in not only lower processing temperature but also lower stress on the dice. This is confirmed by simple stress analysis. The die-bonded specimens endured 40 cycles of thermal shock between -196°C (liquid nitrogen) and +160°C (boiling cyclohexanol) without cracking or bond degradation despite the significant mismatch of thermal expansion coefficients between silicon and alumina. Storage tests at -196 and 250°C also do not induce cracking or bond degradation. Pull test results indicate that the bondings are stronger than the silicon dice themselves
  • Keywords
    adhesion; elemental semiconductors; gold alloys; microassembling; packaging; silicon; soldering; thermal shock; tin alloys; -196 to 160 degC; 10 mm; 6 mm; Al2O3; Au-Sn eutectic; AuSn; bond strength; bonding quality; bonding technique; large Si dice void free bonding; microscope resolution; processing temperature; pull testing; scanning acoustic microscope; semiconductor device chip bonding; stress analysis; thermal expansion coefficients; thermal shock; Bonding; Electric shock; Gold alloys; Microscopy; Silicon alloys; Temperature; Testing; Thermal degradation; Thermal expansion; Thermal stresses;
  • fLanguage
    English
  • Journal_Title
    Components, Hybrids, and Manufacturing Technology, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0148-6411
  • Type

    jour

  • DOI
    10.1109/33.62563
  • Filename
    62563