• DocumentCode
    1256209
  • Title

    Analysis of Transient Currents During Ultrafast Switching of \\hbox {TiO}_{2} Nanocrossbar Devices

  • Author

    Hermes, C. ; Wimmer, M. ; Menzel, S. ; Fleck, K. ; Bruns, G. ; Salinga, M. ; Böttger, U. ; Bruchhaus, R. ; Schmitz-Kempen, T. ; Wuttig, M. ; Waser, R.

  • Author_Institution
    Peter Grunberg Inst., Forschungszentrum Julich GmbH, Julich, Germany
  • Volume
    32
  • Issue
    8
  • fYear
    2011
  • Firstpage
    1116
  • Lastpage
    1118
  • Abstract
    In this letter, bipolar fast-pulse switching in TiO2 -based nanocrossbar devices was investigated. A dedicated measurement setup was used to measure the transient currents during 5-ns resistive switching. Transient peak currents for the set and reset processes were as high as 200 and 230 μA, respectively. The currents observed during fast-pulse switching are explained and simulated by Joule heating, which is needed for fast oxygen-vacancy movement. The measured transient currents enable a further optimization of resistive switches based on TiO2.
  • Keywords
    bipolar transistor switches; nanoelectromechanical devices; semiconductor device measurement; titanium compounds; TiO2; bipolar fast-pulse switching; dedicated measurement setup; fast oxygen-vacancy movement; nanocrossbar devices; resistive switching; transient peak currents; ultrafast switching; Current measurement; Materials; Nanoscale devices; Resistance; Switches; Temperature distribution; Transient analysis; $hbox{TiO}_{2}$; Fast pulses; nanocrossbar device; resistive switching; transient current;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/LED.2011.2156377
  • Filename
    5928381