Reactive-ion-etched diffraction-limited unstable resonator semiconductor lasers

Author

Biellak, Stephen A. ; Fanning, C. Geoff ; Sun, Yan ; Wong, S. Simon ; Siegman, Anthony E.

Author_Institution

Center for Integrated Syst., Stanford Univ., CA, USA

Volume

33

Issue

2

fYear

1997

fDate

2/1/1997 12:00:00 AM

Firstpage

219

Lastpage

230

Abstract

We present characterization and analysis of wide-stripe unstable resonator semiconductor lasers with reactive-ion-etched facets. The mirror facets have RMS roughnesses of only 3-5 mm. Laser beam quality and brightness performance are measured in terms of resonator structure and fabrication parameters. Lateral M² values as low as 1.25 at five times threshold are found. This data is compared to that derived from a Huygen´s integral-beam propagation method simulation which includes appropriate physical and process-induced aberrations, and good agreement is found

Keywords

III-V semiconductors; aberrations; aluminium compounds; gallium arsenide; gradient index optics; laser beams; laser cavity resonators; laser mirrors; laser stability; laser variables measurement; optical fabrication; quantum well lasers; sputter etching; GRINSCH-SQW laser; GaAs-AlGaAs; GaAs-AlGaAs structure; Huygen´s integral-beam propagation method simulation; MOCVD; RMS roughnesses; brightness performance; diffraction-limited unstable resonator; fabrication parameters; laser beam quality; lateral M² values; mirror facets; physical aberrations; process-induced aberrations; reactive-ion-etched facets; reactive-ion-etched laser resonator; resonator structure; semiconductor lasers; wide-stripe unstable resonator semiconductor lasers; Diffraction; Laser beams; Laser modes; Laser theory; Lenses; Mirrors; Optical materials; Optical resonators; Semiconductor lasers; Sun;

fLanguage

English

Journal_Title

Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

0018-9197

Type

jour

DOI

10.1109/3.552262

Filename

552262