Title :
Simple determination of BJT extrinsic base resistance
Author :
Zimmer, T. ; Meresse, A. ; Dom, J.P.
Author_Institution :
IXL, ENSERB-Univ. de Bordeaux I, Talence, France
Abstract :
The extrinsic base resistance of a bipolar transistor can be evaluated by measuring the base voltage in addition to the open-circuited junction voltage. Experimental results demonstrate the efficiency of this technique.
Keywords :
bipolar transistors; electric resistance measurement; semiconductor device testing; base voltage measurement; bipolar transistor; extrinsic base resistance; open-circuited junction voltage;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19911176
