DocumentCode
1256604
Title
Picosecond electro-optic probing of high-speed integrated circuits using external GaAs tip
Author
Nagatsuma, Tadao ; Shinagawa, Mitsuru
Author_Institution
NTT LSI Lab., Kanagawa, Japan
Volume
27
Issue
21
fYear
1991
Firstpage
1904
Lastpage
1905
Abstract
External electro-optic sampling has been demonstrated on high-speed integrated circuits using a pulse-compressed mode-locked Nd:YAG laser and a sophisticated GaAs probe tip. The measurement at frequencies up to 40 GHz has been successfully performed with excellent voltage sensitivity of less than 3 mV/ square root (Hz).
Keywords
III-V semiconductors; digital integrated circuits; electro-optical devices; gallium arsenide; integrated circuit testing; measurement by laser beam; probes; 40 GHz; YAG:Nd laser; YAl5O12:Nd; electro-optic sampling; external GaAs tip; high-speed integrated circuits; picosecond electro-optic probing; pulse-compressed mode-locked;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19911182
Filename
98838
Link To Document