DocumentCode :
1256634
Title :
Field Emission Tip Array Fabrication Utilizing Geometrical Hindrance in the Oxidation of Si
Author :
Sun, Ke ; Zhang, Wei ; Li, Biyun ; Lee, Jae Young ; Xie, Ya-Hong ; Schroeder, Thomas ; Katzer, Jens ; Wei, Xinyu ; Russell, Thomas P.
Author_Institution :
Univ. of California, Los Angeles, CA, USA
Volume :
11
Issue :
5
fYear :
2012
Firstpage :
999
Lastpage :
1003
Abstract :
Sharpness of field emitter tips is one of the key factors to achieve excellent field emission performance. In order to sharpen the tips to atomic scale, a new method combining the bottom-up process of wafer-scale nanopattern formation via self-assembly of diblock copolymer with the top-down process of anisotropic etching of Si followed by nanocasting is developed. Geometrical hindrance in the oxidation of Si at nanometer scale is exploited to further sharpen the field emission tips.
Keywords :
casting; elemental semiconductors; etching; field emitter arrays; nanofabrication; oxidation; polymer blends; self-assembly; silicon; Si; anisotropic etching; bottom-up process; diblock copolymer; field emission tip array fabrication; field emitter tip sharpness; geometrical hindrance; nanocasting; self-assembly; silicon oxidation; top-down process; wafer-scale nanopattern formation; Arrays; Educational institutions; Fabrication; Oxidation; Silicon; Tungsten; Field emission; geometrical hindrance; morphology evolution; nanofabrication; thermal oxidation;
fLanguage :
English
Journal_Title :
Nanotechnology, IEEE Transactions on
Publisher :
ieee
ISSN :
1536-125X
Type :
jour
DOI :
10.1109/TNANO.2012.2208472
Filename :
6256738
Link To Document :
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