Title :
High power, 8.5 W CW, visible laser diodes
Author :
Welch, D.F. ; Scifres, D.R.
Author_Institution :
Spectra Diode Lab., San Jose, CA, USA
Abstract :
Visible laser diodes have been fabricated from AlGaInP operating at approximately 680 nm to high output powers. Broad area lasers with 100 mu m wide emitting apertures operate to greater than 1 W CW with a different efficiency of 38%. The threshold current densities of the material have been measured to be as low as 350 A/cm2 for lasers with 30% mirror reflectivities. Monolithic bars 8 mm long with 50 mu m emitting apertures periodically spaced on 500 mu m centres have been fabricated which operate to 8.5 W CW.
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; indium compounds; semiconductor junction lasers; semiconductor laser arrays; 27 percent; 38 percent; 680 nm; 8.5 W; AlGaInP; broad area lasers; different efficiency; high power CW operation; monolithic bars; power conversion efficiency; threshold current densities; visible laser diodes;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19911189
