Title :
Behavioral models for noise in bipolar and MOSFET mixers
Author :
Hu, Yutao ; Mayaram, Kartikeya
Author_Institution :
Sch. of Electr. Eng. & Comput. Sci., Washington State Univ., Pullman, WA, USA
fDate :
10/1/1999 12:00:00 AM
Abstract :
Frequency-domain behavioral models for noise in both bipolar and MOSFET mixers are presented. These models are developed from a linear time-varying analysis for mixer noise. No simulations are required as in the conventional approach, hence these models are very efficient. Good agreement is obtained between the behavioral models and the results from the simulation based approaches over a range of frequencies and processes. The limitations of the models have been identified and some improvements are suggested
Keywords :
MOSFET circuits; bipolar transistor circuits; circuit noise; circuit simulation; frequency-domain analysis; linear network analysis; mixers (circuits); time-varying networks; MOSFET mixers; bipolar mixers; frequency-domain behavioral models; linear time-varying analysis; mixer noise; Circuit noise; Circuit simulation; Frequency conversion; Frequency domain analysis; MOSFET circuits; Mixers; Noise figure; RF signals; Radio frequency; SPICE;
Journal_Title :
Circuits and Systems II: Analog and Digital Signal Processing, IEEE Transactions on