DocumentCode :
1257545
Title :
Behavioral models for noise in bipolar and MOSFET mixers
Author :
Hu, Yutao ; Mayaram, Kartikeya
Author_Institution :
Sch. of Electr. Eng. & Comput. Sci., Washington State Univ., Pullman, WA, USA
Volume :
46
Issue :
10
fYear :
1999
fDate :
10/1/1999 12:00:00 AM
Firstpage :
1289
Lastpage :
1300
Abstract :
Frequency-domain behavioral models for noise in both bipolar and MOSFET mixers are presented. These models are developed from a linear time-varying analysis for mixer noise. No simulations are required as in the conventional approach, hence these models are very efficient. Good agreement is obtained between the behavioral models and the results from the simulation based approaches over a range of frequencies and processes. The limitations of the models have been identified and some improvements are suggested
Keywords :
MOSFET circuits; bipolar transistor circuits; circuit noise; circuit simulation; frequency-domain analysis; linear network analysis; mixers (circuits); time-varying networks; MOSFET mixers; bipolar mixers; frequency-domain behavioral models; linear time-varying analysis; mixer noise; Circuit noise; Circuit simulation; Frequency conversion; Frequency domain analysis; MOSFET circuits; Mixers; Noise figure; RF signals; Radio frequency; SPICE;
fLanguage :
English
Journal_Title :
Circuits and Systems II: Analog and Digital Signal Processing, IEEE Transactions on
Publisher :
ieee
ISSN :
1057-7130
Type :
jour
DOI :
10.1109/82.799679
Filename :
799679
Link To Document :
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