SWIR/MWIR InP-Based p-i-n Photodiodes With InGaAs/GaAsSb Type-II Quantum Wells

Author

Chen, Baile ; Jiang, Weiyang ; Yuan, Jinrong ; Holmes, Archie L., Jr. ; Onat, Bora M.

Author_Institution

Dept. of Electr. & Comput. Eng., Univ. of Virginia, Charlottesville, VA, USA

Volume

47

Issue

9

fYear

2011

Firstpage

1244

Lastpage

1250

Abstract

This paper presents the performance characteristics of InP-based p-i-n photodiodes with strain-compensated and lattice-matched InGaAs/GaAsSb type-II multiple quantum well (MQW) absorption regions. The results show that photodiodes with strain-compensated and lattice-matched absorption regions have optical response out to 3.4 and 2.8 μm with dark current densities of 9.7 and 1.66 mA cm^-2,respectively, at 290 K under -0.5 V reverse bias. The carrier transport mechanism responsible for the difference in responsivity and detectivity between strain-compensated and lattice-matched InGaAs/GaAsSb MQWs is discussed.

Keywords

III-V semiconductors; current density; gallium arsenide; indium compounds; infrared detectors; light absorption; p-i-n photodiodes; photodetectors; semiconductor quantum wells; InP-InGaAs-GaAsSb; MWIR p-i-n photodiodes; SWIR p-i-n photodiodes; carrier transport mechanism; dark current densities; midwave infrared photodetectors; optical absorption; optical response; short-wave infrared photodetectors; strain-compensated lattice-matched type-II multiple quantum well; temperature 290 K; voltage 0.5 V; Absorption; Current measurement; Dark current; Indium gallium arsenide; Noise; Strain; Temperature measurement; Detectivity; GaAsSb; InGaAs; mid-wavelength infrared; p-i-n photodiode; short-wavelength infrared; type-II multiple quantum wells;

fLanguage

English

Journal_Title

Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

0018-9197

Type

jour

DOI

10.1109/JQE.2011.2160450

Filename

5930314