Title :
High power continuous operation of laser diodes at 1064 nm
Author :
Murison, R.F. ; Moore, Alastair H. ; Lee, Shi-Wei Ricky ; Holehouse, N. ; Dzurko, K.M. ; Cockerill, T.M. ; Coleman, J.J.
Author_Institution :
EG&G Optoelectron., Vaudreuil, Que., Canada
Abstract :
High power operation of strained-layer quantum well laser diodes at 1064 nm wavelength is described, with up to 5.25 W of continuous wave power achieved from a single 100 mu m broad area stripe at room temperature before the onset of catastrophic facet damage. These devices also possess low threshold current and high power conversion efficiency.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; semiconductor junction lasers; 1064 nm; 5.25 W; InGaAs-GaAs-AlGaAs laser structure; broad area stripe; catastrophic facet damage; continuous wave power; high power continuous operation; high power conversion efficiency; low threshold current; strained-layer quantum well laser diodes;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19911226
