Title :
Normally on reflection-type two-wavelength quantum-well modulator with balanced cavity design
Author :
Tsai, Chia-Ming ; Lee, Chien-Ping
Author_Institution :
Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan
fDate :
7/1/1997 12:00:00 AM
Abstract :
We have demonstrated a AlGaAs-AlAs DBR reflection-type two-wavelength modulator with a novel balanced cavity design. Simultaneous operations at wavelengths of around 860 and 896 nm have been achieved. By using such a new cavity design similar operating voltages have been obtained for both wavelengths. Under separate biasing voltages of 14.5 and 11 V on each quantum-well absorbing region, the maximum reflectivity changes were around 50%.
Keywords :
Fabry-Perot resonators; III-V semiconductors; aluminium compounds; electro-optical modulation; electro-optical switches; gallium arsenide; optical communication equipment; optical resonators; reflectivity; semiconductor quantum wells; 11 V; 14.5 V; 860 nm; 896 nm; AlGaAs-AlAs DBR reflection-type two-wavelength modulator; balanced cavity design; cavity design; maximum reflectivity changes; operating voltages; quantum-well absorbing region; reflection-type two-wavelength modulator; reflection-type two-wavelength quantum-well modulator; separate biasing voltages; Distributed Bragg reflectors; Optical arrays; Optical interconnections; Optical reflection; Optical resonators; Quantum well devices; Quantum wells; Reflectivity; Stark effect; Voltage;
Journal_Title :
Photonics Technology Letters, IEEE
